Compensation mechanism for As donor in Hg1-xCdxTe: The case of AsHg-VHg pair

被引：4
作者：
Duan, H. [1 ,2 ]
Dong, Y. Z. [3 ]
Chen, X. S. [2 ]
Hu, Y. H. [1 ]
Wang, Y. H. [1 ]
Lu, W. [2 ]
机构：
[1] Guangdong Univ Technol, Sch Phys & Optoelect Engn, Guangzhou 510006, Guangdong, Peoples R China
[2] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
[3] S China Univ Technol, Sch Phys, Guangzhou 510640, Peoples R China
来源：
PHYSICS LETTERS A | 2010年 / 374卷 / 43期
基金：
中国国家自然科学基金;
关键词：
MOLECULAR-BEAM EPITAXY; ACTIVATION; HGCDTE;
D O I：
10.1016/j.physleta.2010.09.006
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Using first-principles method we studied the compensation mechanism of As donor in Hg1-xCdx, Te based on the model Berding et al. (1998, 1999) pi of As-Hg-V-Hg pair. We show that the binding of As-Hg and V-Hg results from donor-acceptor coupling, and the compensation of As donor can be clearly explained in terms of electronic deactivation by V-Hg. The pairing physics derived from this study confirm the available theoretical and experimental results. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：4471 / 4474
页数：4
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