Orientational superlattices in ordered GaInP2

被引：11

作者：

Mascarenhas, A

Zhang, Y

Alonso, R

Froyen, S

机构：

[1] National Renewable Energy Laboratory, Golden

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 100卷 / 01期

关键词：

semiconductors; order-disordered effects; electronic band structure;

D O I：

10.1016/0038-1098(96)00375-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Novel results on the electronic properties of superlattices of orientational domain boundaries in ordered GaInP2 are presented. These superlattices exhibit spatially varying amplitudes for their Bloch states, modifications to the band gap, and the appearance of sub-bands and minigaps resulting from periodic perturbations to the angular momentum of electrons. Characteristic features of five distinct polytype structures are discussed in relation to their symmetries. Published by Elsevier Science Ltd

引用

页码：47 / 51

页数：5

共 17 条

[11] POLARIZED PHOTOLUMINESCENCE MEASUREMENTS OF THE VALENCE-BAND SPLITTING IN SINGLE-VARIANT, SPONTANEOUSLY ORDERED GAINP(2)
HORNER, GS
MASCARENHAS, A
ALONSO, RG
FRIEDMAN, DJ
SINHA, K
BERTNESS, KA
ZHU, JG
OLSON, JM
[J]. PHYSICAL REVIEW B, 1993, 48 (07): : 4944 - 4947
[12] ELECTRONIC-PROPERTIES OF TWIN BOUNDARIES AND TWINNING SUPERLATTICES IN DIAMOND-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS
IKONIC, Z
SRIVASTAVA, GP
INKSON, JC
[J]. PHYSICAL REVIEW B, 1993, 48 (23): : 17181 - 17193
[13] TRANSMISSION ELECTRON-MICROSCOPIC STUDY OF THE ORDERED STRUCTURE IN GAINP/GAAS EPITAXIALLY GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
MORITA, E
IKEDA, M
KUMAGAI, O
KANEKO, K
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (22) : 2164 - 2166
[14] EFFECTIVE-MASS SUPERLATTICE
SASAKI, A
[J]. PHYSICAL REVIEW B, 1984, 30 (12) : 7016 - 7020
[15] STRAIN EFFECTS ON THE SPECTRA OF SPONTANEOUSLY ORDERED GAXIN1-XP
WEI, SH
ZUNGER, A
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (06) : 757 - 759
[16] CONDUCTION-BAND AND VALENCE-BAND EFFECTIVE MASSES IN SPONTANEOUSLY ORDERED GAINP2
ZHANG, Y
MASCARENHAS, A
[J]. PHYSICAL REVIEW B, 1995, 51 (19) : 13162 - 13173
[17] Zunger A, 1994, HDB SEMICONDUCTORS B, V3, P1399

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