Electrical Properties of Heavily Doped Fluorite-Structured BaF2:RF3 (R = La, Pr, Nd, Gd, Tb, Y, Sc) Single Crystals

被引：9

作者：

Trnovcova, V. ^{[1
,2
]}

Sorokin, N. I. ^{[3
]}

Fedorov, P. P. ^{[3
]}

Krivandina, E. A. ^{[3
]}

Sramkova, T. ^{[2
]}

Sobolev, B. P. ^{[3
]}

机构：

[1] Slovak Univ Technol, Fac Mat Sci & Technol, SK-91724 Trnava, Slovakia

[2] Slovak Acad Sci, Inst Phys, SK-84228 Bratislava, Slovakia

[3] Russian Acad Sci, Shubnikovs Inst Crystallog, Moscow 117333, Russia

来源：

IONICS | 2000年 / 6卷 / 5-6期

关键词：

D O I：

10.1007/BF02374152

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The superionic conductivity and dielectric response of heavily doped fluorite-structured Ba1-xRxF2+x (R = La, Pr, Nd, Gd, Tb, Y, Sc; x = 0.005 - 0.45) crystals are reported. The highest ionic conductivity is found for R = Sc and x = 0.1. Upon ScF3 doping, small Sc3+ ions rearrange their surroundings, create excessive fluoride interstitial ions and bring about a high ionic conductivity. For each dopant, the concentration dependence of the ionic conductivity is non-linear. A monotonous concentration dependence of the ionic conductivity is found only for La3+ doping. Upon doping with Nd3+, Gd3+, Tb3+, Y3+ and Sc3+ ions, a conductivity maximum is observed at x = 0.1 - 0.2. Upon Pr3+ doping, this maximum is split. The influence of defect clustering on the concentration dependence of the conductivity is discussed.

引用

页码：351 / 358

页数：8

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