Surface and Intrinsic Conduction Properties of Au-Catalyzed Si Nanowires

被引：2

作者：

Borowik, L. ^{[1
]}

Florea, I. ^{[2
]}

Deresmes, D. ^{[1
]}

Ersen, O. ^{[2
]}

Hourlier, D. ^{[1
]}

Melin, T. ^{[1
]}

机构：

[1] CNRS, Inst Elect Microelect & Nanotechnol, UMR 8520, F-59652 Villeneuve Dascq, France

[2] Univ Strasbourg, Inst Phys & Chim Mat Strasbourg, CNRS, UMR 7504, F-67034 Strasbourg 2, France

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2012年 / 116卷 / 11期

关键词：

GOLD; GROWTH;

D O I：

10.1021/jp300816e

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An original atomic force microscopy (AFM) method is used to probe surface conduction properties of Au-catalyzed (111) oriented Si nanowires (NWs) attached on the substrate on which they were grown. Drastically different transport regimes are observed upon tuning the electronic junction between the AFM tip and NW (AFM tip work function and NW surface states) and temperature, which reveal the interplay between Schottky interface junctions, Au-mediated surface conduction along the NW sidewalls, and conduction through NWs. The method is applied to extract the intrinsic resistance of nominally undoped NWs when removed from surface Au catalyst residues, and provides evidence for transport through Si NWs with effective residual doping as low as approximate to 10(14)-10(15) cm(-3).

引用

页码：6601 / 6607

页数：7

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