Improvement of resistive switching in CuxO using new RESET mode

被引：36
作者：
Yin, M. [1 ]
Zhou, P.
Lv, H. B.
Xu, J.
Song, Y. L.
Fu, X. F.
Tang, T. A.
Chen, B. A.
Lin, Y. Y.
机构：
[1] Fudan Univ, ASIC, Shanghai 200433, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 07期
基金：
中国国家自然科学基金;
关键词：
CuxO; endurance; nonvolatile memory; resistive switching;
D O I：
10.1109/LED.2008.923319
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Wide dispersions of memory switching parameters are observed in resistive random access memory based on Al/CuxO/Cu structure. Moreover, the switching instability induced by these dispersions is studied. In this letter, a ramped-pulse series operation method is put forward, which can improve switching stability and cycling endurance remarkably. A method for minimizing the dispersion of V-reset by optimizing the amplitude of pulse is proposed further. The write-read-erase-read operations can be over 8 x 10(3) cycles without degradation by using the new operation mode. The role of Joule heating behind this behavior of Al/CuxO/Cu device is discussed.
引用
收藏
页码：681 / 683
页数：3
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