The Resistive-Reactive Class-J Power Amplifier Mode

被引：50

作者：

Friesicke, Christian ^{[1
]}

Quay, Ruediger ^{[2
]}

Jacob, Arne F. ^{[1
]}

机构：

[1] Tech Univ Hamburg, Inst Hochfrequenztech, D-21073 Hamburg, Germany

[2] Fraunhofer Inst Appl Solid State Phys IAF, D-79108 Freiburg, Germany

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2015年 / 25卷 / 10期

关键词：

Class-J; losses; power amplifiers (PAs);

D O I：

10.1109/LMWC.2015.2463211

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter introduces a theory which considers the effect of lossy second-harmonic terminations on the voltage waveform, output power, and efficiency of power amplifiers (PAs) operated in the class-J mode. To this end, the conventional (reactive) class-J mode is extended to a resistive-reactive class-J mode with complex fundamental and second-harmonic load impedances. The theory is experimentally validated by performing on-wafer active load-pull measurements on an AlGaN/GaN HEMT power device with 0.25 mu m gate length and a total gate periphery of 6 x 200 mu m. The measured waveforms are de-embedded to the internal current-generator of the device, where they exhibit the theoretically predicted behavior.

引用

页码：666 / 668

页数：3

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