Novel Continuous Inverse Class F Power Amplifier for High Power 5G Macro Base Station Application

被引：6

作者：

Sharma, Tushar ^{[1
]}

Zhu, Ning ^{[1
]}

Roberts, Jeffrey ^{[1
]}

Holmes, Damon H. ^{[1
]}

机构：

[1] NXP Semicond, Chandler, AZ 85224 USA

来源：

2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2021年

关键词：

broadband; input harmonic; gallium nitride (GaN); harmonic termination; inverse class F; integrated passive device (IPD); power amplifier; high power; power density; integrated passive device; INPUT;

D O I：

10.1109/IMS19712.2021.9574940

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper explores the design space and implementation of a Class F-1 PA using an in-package solution for sub-6 GHz macro base station applications. Special care is taken to select a second harmonic source termination that simultaneously provides high power density, high efficiency and smooth AM/AM linearity properties. A compact, pre-matched gallium-nitride (GaN) Class F-1 amplifier is manufactured, as proof-of-concept, using integrated passive devices (IPDs) and bond wires to demonstrate its application to high power broadband cellular infrastructure. The prototype demonstrated 14W/mm at 48V supply, 55.43 dBm (350 W) total peak power with the highest efficiency of 75 % and a large signal gain of 19 dB across 20% fractional RF bandwidth from 1.805 - 2.2 GHz.

引用

收藏

页码：729 / 731

页数：3

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