Thermal and Spatial Dependence of TSV-induced Stress in Si

被引：0

作者：

McDonough, C. ^{[1
]}

Backes, B. ^{[1
]}

Wang, W. ^{[1
]}

Caramto, R. ^{[2
]}

Geer, R. E. ^{[1
]}

机构：

[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12222 USA

[2] SEMATECH, Albany, NY 12222 USA

来源：

2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermal and spatial variation of Cu TSV-induced stress has been investigated for 1x4 arrays of 5 mu m diameter x 50 mu m TSVs using microRaman imaging. Following post-CMP annealing the measured Si Raman shift outside the TSV array is slightly modified. In strong contrast, the Si Raman shift midway between TSVs transitions from a tensile to compressive state as the annealing temperature increases. Topographic analysis implies this shift is associated with thermally-induced Cu extrusion.

引用

页数：3