Selective deposition of diamond films on insulators by selective seeding with a double-layer mask

被引：9

作者：

Liu, HW ^{[1
]}

Gao, CX ^{[1
]}

Li, X ^{[1
]}

Wang, CX ^{[1
]}

Han, YH ^{[1
]}

Zou, GT ^{[1
]}

机构：

[1] Jilin Univ, Inst Atom & Mol Phys, State Key Lab Superhard Mat, Changchun 130023, Peoples R China

来源：

关键词：

diamond film; selective deposition; selective seeding; double-layer mask;

D O I：

10.1016/S0925-9635(01)00411-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline diamond films have been patterned on Si3N4/Si and SiO2/Si substrates by selective seeding with a double-layer mask via hot-filament chemical vapor deposition. High quality in the patterned diamond films and high selectivity were obtained by the process. The diamond films deposited on the insulators at different CH4/H-2 concentrations were studied by scanning electron microscopy and Raman spectroscopy, The process proved to be far less damaging to the substrates, and yet effective in developing patterns of diamond films on a large and different substrate. (C) 2001 Elsevier Science BN. All rights reserved.

引用

页码：1573 / 1577

页数：5

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