X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

被引：56

作者：

Hrauda, Nina ^{[1
]}

Zhang, Jianjun ^{[1
]}

Wintersberger, Eugen ^{[1
]}

Etzelstorfer, Tanja ^{[1
]}

Mandl, Bernhard ^{[1
]}

Stangl, Julian ^{[1
]}

Carbone, Dina ^{[2
]}

Holy, Vaclav ^{[3
]}

Jovanovic, Vladimir ^{[4
]}

Biasotto, Cleber ^{[4
]}

Nanver, Lis K. ^{[4
]}

Moers, Juergen ^{[5
]}

Gruetzmacher, Detlev ^{[5
]}

Bauer, Guenther ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Semicond Phys, A-4040 Linz, Austria

[2] European Synchrotron Radiat Facil, F-38043 Grenoble, France

[3] Charles Univ Prague, Fac Math & Phys, CR-12116 Prague, Czech Republic

[4] Delft Univ Technol, DIMES, NL-2628 CT Delft, Netherlands

[5] Forschungszentrum Julich, Halbleiter Nanoelektr IBN 1, D-52425 Julich, Germany

来源：

NANO LETTERS | 2011年 / 11卷 / 07期

关键词：

X-ray nanodiffraction; semiconductor nanostructures; structural investigations; finite element simulations; ordered island growth; silicon germanium; SURFACE EVOLUTION; STRAIN; DIFFRACTION; ISLANDS; SHAPE;

D O I：

10.1021/nl2013289

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.

引用

页码：2875 / 2880

页数：6

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