3-dimensional analytical modeling and simulation of fully depleted AlGaN/GaN modulation doped field effect transistor

被引：2

作者：

Kumar, Sona P. ^{[1
]}

Agrawal, Anju ^{[2
]}

Chaujar, Rishu ^{[1
]}

Kabra, Sneha ^{[1
]}

Gupta, Mridula ^{[1
]}

Gupta, R. S. ^{[1
]}

机构：

[1] Univ Delhi, Dept Elect Sci, Semicond Devices Res Lab, South Campus, New Delhi 110021, India

[2] Acharya Narendra Col, Dept Elect, New Delhi 110019, India

来源：

PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 | 2007年

关键词：

AlGaN/GaN MODFET; small geometry; short channel effects; three-dimensional (3-D) modeling; threshold voltage;

D O I：

10.1109/IWPSD.2007.4472523

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a simple and accurate three-dimensional (3-D) analytical model for the threshold voltage of AlGaN/GaN modulation doped field effect transistor (MODFET) taking into account the short channel effects (SCEs) and the narrow width effects (NWEs) present simultaneously in a small geometry device. The model includes the effect of vital parameters such as doping and thickness of the barrier layer on the threshold voltage. The accuracy of the proposed analytical model is verified by comparing the model results with 3-D device simulations. It has been demonstrated that the proposed model correctly predicts the potential, the electric field distribution along the channel and the threshold voltage.

引用

页码：373 / +

页数：2

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