Silicon-on-insulator technology: Past achievements and future prospects

被引：18

作者：

Colinge, JP ^{[1
]}

机构：

[1] Univ Calif Davis, Davis, CA 95616 USA

来源：

关键词：

D O I：

10.1557/S0883769400029778

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：16 / 19

页数：4

共 22 条

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[3]

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[4]

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[5]

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[6]

EGGERMONT JP, 1996, T 3 INT HIGH TEMP EL, V1, pX3

[7]

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[8]

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[9]

FUSE T, 1996, IEEE, P286

[10]

FUSE T, 1996, ISSCC, P88