In Situ Atmospheric Deposition of Ultrasmooth Nickel Oxide for Efficient Perovskite Solar Cells

被引:48
作者
Zhao, Baodan [1 ]
Lee, Lana C. [2 ]
Yang, Le [1 ,3 ]
Pearson, Andrew J. [1 ]
Lu, Haizhou [1 ,4 ]
She, Xiao-Jian [1 ]
Cui, Linsong [1 ]
Zhang, Kelvin H. L. [2 ]
Hoye, Robert L. Z. [1 ]
Karani, Arfa [1 ]
Xu, Peicheng [1 ]
Sadhanala, Aditya [1 ]
Greenham, Neil C. [1 ]
Friend, Richard H. [1 ]
MacManus-Driscoll, Judith L. [2 ]
Di, Dawei [1 ]
机构
[1] Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 OHE, England
[2] Univ Cambridge, Dept Mat Sci & Met, 27 Charles Babbage Rd, Cambridge CB3 0FS, England
[3] ASTAR, IMRE, 2 Fusionopolis Way, Singapore 138634, Singapore
[4] Fudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
基金
英国工程与自然科学研究理事会;
关键词
perovskite solar cells; nickel oxide; atmospheric atomic layer deposition; charge collection; hole-transport layers; ATOMIC LAYER DEPOSITION; INTERFACIAL LAYER; EXTRACTION LAYER; HIGHLY EFFICIENT; TEMPERATURE; FILMS;
D O I
10.1021/acsami.8b15503
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Organic-inorganic perovskite solar cells have attracted significant attention due to their remarkable performance. The use of alternative metal-oxide charge-transport layers is a strategy to improving device reliability for large-scale fabrication and long-term applications. Here, we report solution-processed perovskite solar cells employing nickel oxide hole-extraction layers produced in situ using an atmospheric pressure spatial atomic-layer deposition system, which is compatible with high-throughput processing of electronic devices from solution. Our sub-nanometer smooth (average roughness of <= 0.6 nm) oxide films enable the efficient collection of holes and the formation of perovskite absorbers with high electronic quality. Initial solar-cell experiments show a power-conversion efficiency of 17.1%, near-unity ideality factors, and a fill factor of >80% with negligible hysteresis. Transient measurements reveal that a key contributor to this performance is the reduced luminescence quenching trap density in the perovskite/nickel oxide structure.
引用
收藏
页码:41849 / 41854
页数:6
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