Mid-wave infrared HgCdTe nBn photodetector

被引：139

作者：

Itsuno, Anne M. ^{[1
]}

Phillips, Jamie D. ^{[1
]}

Velicu, Silviu ^{[2
]}

机构：

[1] Univ Michigan, Dept Elect Engn, Ann Arbor, MI 48109 USA

[2] EPIR Technol, Bolingbrook, IL 60440 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 16期

基金：

美国国家科学基金会;

关键词：

cadmium compounds; II-VI semiconductors; infrared detectors; mercury compounds; numerical analysis; photodetectors; semiconductor doping; SURFACE LEAKAGE CURRENTS; DEFECTS; MBE; IMPLANTATION; DIODES;

D O I：

10.1063/1.4704359

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A unipolar, barrier-integrated HgCdTe nBn photodetector with all n-type doping and a type-I band lineup is experimentally demonstrated. Planar mid-wave infrared (MWIR) nBn devices exhibit current-voltage (I-V) characteristics that are consistent with band inversion in reverse bias, indicating a barrier-influenced behavior. Dark current saturation is observed beyond a reverse bias of approximately -0.8 V. Bias-dependent photoresponse is observed in the mid-wave infrared with a cut-off wavelength around 5.7 mu m. Numerical modeling based on experimental results predicts an internal peak quantum efficiency of approximately 66%. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704359]

引用

页数：3

共 16 条

[1] Small two-dimensional arrays of mid-wavelength infrared HgCdTe diodes fabricated by reactive ion etching-induced p-to-n-type conversion [J].

Antoszewski, J ;

Musca, CA ;

Dell, JM ;

Faraone, L .

JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (07) :627-632

[2] BEHAVIOR OF IMPLANTATION-INDUCED DEFECTS IN HGCDTE [J].

BUBULAC, LO ;

TENNANT, WE ;

RIEDEL, RA ;

MAGEE, TJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :251-254

[3] DEFECTS, DIFFUSION AND ACTIVATION IN ION-IMPLANTED HGCDTE [J].

BUBULAC, LO .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :723-734

[4] MBE growth and characterization of in situ arsenic doped HgCdTe [J].

Chen, AC ;

Zandian, M ;

Edwall, DD ;

De Wames, RE ;

Wijewarnasuriya, PS ;

Arias, JM ;

Sivananthan, S ;

Berding, M ;

Sher, A .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (06) :595-599

[5] ELECTRICAL DOPING OF HGCDTE BY ION-IMPLANTATION AND HEAT-TREATMENT [J].

DESTEFANIS, GL .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :700-722

[6] A general relation between zero-bias resistance-area product and perimeter-to-area ratio of the diodes in variable-area diode test structures [J].

Gopal, V .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (07) :1070-1076

[7] Design and Modeling of HgCdTe nBn Detectors [J].

Itsuno, A. M. ;

Phillips, J. D. ;

Velicu, S. .

JOURNAL OF ELECTRONIC MATERIALS, 2011, 40 (08) :1624-1629

[8] nBn detector, an infrared detector with reduced dark current and higher operating temperature [J].

Maimon, S. ;

Wicks, G. W. .

APPLIED PHYSICS LETTERS, 2006, 89 (15)

[9] Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectors [J].

Pedrazzani, J. R. ;

Maimon, S. ;

Wicks, G. W. .

ELECTRONICS LETTERS, 2008, 44 (25) :1487-+

[10] Precise arsenic doping of HgCdTe by MBE and effects on compositional interdiffusion [J].

Piquette, E. C. ;

Edwall, D. D. ;

Lee, D. L. ;

Arias, J. M. .

JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (06) :1346-1349

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