Synthesis of large single crystal diamond plates by high rate homoepitaxial growth using microwave plasma CVD and lift-off process

被引：106

作者：

Mokuno, Y. ^{[1
]}

Chayahara, A. ^{[1
]}

Yamada, H. ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Diamond Res Ctr, Osaka 5638577, Japan

来源：

关键词：

diamond; microwave plasma CVD; high rate growth; ion implantation; lift-off; self-standing plate;

D O I：

10.1016/j.diamond.2007.12.058

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A process of making a large, thick single crystal CVD diamond plates has been developed. This process consists of high rate homoepitaxial growth of CVD diamond and subsequent lift-off process using ion implantation. By using this process, single crystal CVD diamond plates with the size of about 10 x 10 x 0.2-0.45 mm(3) have been successfully fabricated. The crystallinity of the CVD diamond plates has been evaluated by X-ray topography, polarized light microscopy and high resolution X-ray diffraction. The results indicate the pretreatment of the seed substrate has strong effect on the crystallinity of the CVD diamond plates. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：415 / 418

页数：4

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