Characterization of transparent and conductive electrodes of Nb-doped SnO2 thin film by pulsed laser deposition

被引：40

作者：

Seo, Yong Jun ^{[1
]}

Kim, Geun Woo ^{[1
]}

Sung, Chang Hoon ^{[1
]}

Anwar, M. S. ^{[1
]}

Lee, Chan Gyu ^{[1
]}

Koo, Bon Heun ^{[1
]}

机构：

[1] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea

来源：

CURRENT APPLIED PHYSICS | 2011年 / 11卷 / 03期

关键词：

PLD; SnO2; TCO; Resistivity; Optical properties; Thin films; LIGHT-EMITTING DEVICES; TIN OXIDE-FILMS; ELECTRICAL-PROPERTIES; SOLAR-CELLS; FLUORINE; TEMPERATURE; BEHAVIOR; DOPANTS;

D O I：

10.1016/j.cap.2010.11.070

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nb-doped SnO2 thin films were deposited on glass substrate by pulsed laser deposition. The structural, optical and electrical properties of these films were investigated as a function of doping level, oxygen partial pressure, substrate temperature and thickness. The structural properties of electrodes were studied by X-ray diffraction analysis and field emission scanning electron microscope images. The Optical properties of electrodes were studied by recording the UV-visible transmittance curves. The electrical properties were investigated by the four-point probe sheet resistance and hall-effect measurements. For 500 nm thick SnO2: 4 wt.% Nb2O5 film deposited at 500 degrees C and 60 m Torr of oxygen partial pressure, an electrical resistivity 6.65 x 10(-3) Omega cm with an average optical transmittance in visible range (400-800 nm) of 85%, and an optical band gap of 4.27 eV was observed. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：S310 / S313

页数：4

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