Evidence of large high frequency complete phononic band gaps in silicon phononic crystal plates

被引：174

作者：

Mohammadi, Saeed ^{[1
]}

Eftekhar, Ali Asghar ^{[1
]}

Khelif, Abdelkrim ^{[2
]}

Hunt, William D. ^{[1
]}

Adibi, Ali ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Univ Franche Comte, CNRS, UMR 6174, Inst FEMTO ST, F-25044 Besancon, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 22期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2939097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show the evidence of the existence of large complete phononic band gaps (CPBGs) in two-dimensional phononic crystals (PCs) formed by embedding cylindrical air holes in a solid plate (slab). The PC structure is made by etching a hexagonal array of air holes through a freestanding plate of silicon. A fabrication process compatible with metal-oxide-semiconductor technology is used on silicon-on-insulator substrate to realize the PC devices. Measuring the transmission of elastic waves through eight layers of the hexagonal lattice PC in the Gamma K direction, more than 30 dB attenuation is observed at a high frequency; i.e., 134 MHz, with a band gap to midgap ratio of 23%. We show that this frequency region matches very well with the expected CPBG found through theoretical calculations. (C) 2008 American Institute of Physics.

引用

页数：3

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