Effect of post-growth annealing treatment on interfacial misfit GaSb/GaAs heterostructures

被引：3

作者：

Aziz, M. ^{[1
]}

Mesli, A. ^{[2
,3
]}

Felix, J. F. ^{[4
,5
]}

Jameel, D. ^{[1
]}

Al Saqri, N. ^{[1
]}

Taylor, D. ^{[1
]}

Henini, M. ^{[1
]}

机构：

[1] Univ Nottingham, Nottingham Nanotechnol & Nanosci Ctr, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] CNRS, IM2NP, UMR 7334, F-13397 Marseille 20, France

[3] Univ Aix Marseille, F-13397 Marseille 20, France

[4] Univ Fed Vicosa, Dept Fis, BR-36570900 Vicosa, MG, Brazil

[5] Univ Brasilia, Inst Fis, Nucl Fis Aplicada, BR-70910900 Brasilia, DF, Brazil

来源：

JOURNAL OF CRYSTAL GROWTH | 2015年 / 424卷

关键词：

Defects; EL2; Interfacial misfit; Gallium arsenide; THREADING DISLOCATIONS; DEFECTS; GASB; SPECTROSCOPY; MORPHOLOGY; ELECTRON;

D O I：

10.1016/j.jcrysgro.2015.04.039

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Post-growth annealing treatments in the range 400-600 degrees C are performed on GaSb/GaAs Interfacial Misfit grown samples. Current density-voltage (J-V), Capacitance-voltage (C-V), capacitance-frequency (C-F) and Deep Level Transient Spectroscopy (DLTS) measurements are performed On as-grown and annealed samples. Our studies show that possible defect compensation is observed with the annealing treatments, resulting in a significant improvement in the performances of the devices. (C) 2015 Elsevier B.V. All rights reserved.

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页码：5 / 10

页数：6

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