Electrically biased photoreflectance study of cubic GaN/GaAs(001) heterointerface

被引：3

作者：

Katayama, R ^{[1
]}

Kuroda, M ^{[1
]}

Onabe, K ^{[1
]}

Shiraki, Y ^{[1
]}

机构：

[1] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303361

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Electrically-biased photoreflectance (PR) spectrum measurements were carried out for the Au/cubic-AlGaN/GaN/n-GaAs(001) Schottky diode structure. The built-in electric-field strength at the GaAs side of the GaN/GaAs interface and its dependence on the external-bias voltage, evaluated by the Fast Fourier Transform analysis of the Franz-Keldysh oscillation in the PR spectrum, suggest the formation of the hole channel in the vicinity of the GaN/GaAs heterointerface even under the zero-biased condition. The band-lineup and band-bending at this heterointerface were discussed in relation to the parallel conduction phenomena observed in the Hall effect and photoconductivity measurements. (C) 2003 WILEY-VCH Vertag GmbH & Co. KGaA, Weinheim.

引用

页码：2597 / 2601

页数：5

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