Investigation of bulk traps enhanced gate-induced leakage current in Hf-based MOSFETs

被引：15
|
作者：
Liao, J. C. [1 ]
Fang, Yean-Kuen [1 ]
Hou, Y. T. [2 ]
Tseng, W. H. [2 ]
Hsu, P. F. [2 ]
Lin, K. C. [2 ]
Huang, K. T. [2 ]
Lee, T. L. [2 ]
Liang, M. S. [2 ]
机构：
[1] Natl Cheng Kung Univ, VLSI Technol Lab, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan
[2] Taiwan Semicond Mfg Co, Hsinchu 300, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 05期
关键词：
bulk traps enhanced gate-induced leakage (BTE-GIDL); gate-induced drain leakage (GIDL); Hf-based MOSFETs; trap-assisted tunneling (TAT);
D O I：
10.1109/LED.2008.920286
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comprehensive study on bulk trap enhanced gate-induced drain leakage (BTE-GIDL) currents in high-kappa MOSFETs is reported in this letter. The dependence of GIDL for various parameters, including the effect of Zr concentration in HfZrOX, high-kappa. film thickness, and electrical stress is investigated. The incorporation of Zr into HfO2 reduces GIDL. GIDL was also found to reduce with thinner high-kappa film. In addition, a significant correlation between GIDL and bulk trap density in high-kappa film is established. Possible mechanisms were provided to explain the role of bulk trapping in BTE-GIDL, observed in high-kappa devices.
引用
收藏
页码：509 / 511
页数：3
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