On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

被引：40
|
作者：
Li, Luping [1 ]
Zhang, Yonghui [1 ]
Xu, Shu [1 ]
Bi, Wengang [1 ]
Zhang, Zi-Hui [1 ]
Kuo, Hao-Chung [2 ,3 ]
机构：
[1] Hebei Univ Technol, Key Lab Elect Mat & Devices Tianjin, Inst Micronano Photoelect & Electromagnet Technol, Sch Elect & Informat Engn, 5340 Xiping Rd, Tianjin 300401, Peoples R China
[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
来源：
MATERIALS | 2017年 / 10卷 / 10期
基金：
中国国家自然科学基金;
关键词：
III-nitride semiconductor; multiple quantum well; light-emitting diode; hole injection efficiency; external quantum efficiency; internal quantum efficiency; ATOMIC-LAYER EPITAXY; NI/AU OHMIC CONTACT; QUANTUM-WELL; ALN/ALGAN SUPERLATTICES; ENHANCEMENT; EFFICIENCY; MG; IMPROVEMENT; ALXGA1-XN; EMISSION;
D O I：
10.3390/ma10101221
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.
引用
收藏
页数：17
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