Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides

2D ferroelectric materials are promising for designing low-dimensional memory devices. Here, we explore strain-tunable ferroelectric properties of group-IV monochalcogenides MX (M = Ge, Sn; X = S, Se) and their potential application in lateral field tunnel junction devices. We find that these monolayers have in-plane ferroelectricity, with their ferroelectric parameters being on par with other known 2D ferroelectric materials. Among SnSe, SnS, GeSe, and GeS, we find that GeS has the best ferroelectric parameters for device applications, which can be improved further by applying uniaxial tensile strain. We use the calculated ferroelectric properties of these materials to study the tunneling electroresistance (TER) of a 4 nm device based on a lateral ferroelectric tunnel junction. We find a substantial TER ratio of 10 3- 10 5 in the devices based on these materials, which can be further improved up to a factor of 40 on the application of tensile strain.