Efficiency of GaAs-based pulsed terahertz emitters

被引：0
作者：
Reklaitis, A. [1 ]
机构：
[1] Inst Semicond Phys, LT-01108 Vilnius, Lithuania
来源：
ACTA PHYSICA POLONICA A | 2008年 / 113卷 / 03期
关键词：
D O I：
10.12693/APhysPolA.113.903
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Terahertz emission from the electron-hole plasma excited by a femtosecond optical pulse in GaAs-based emitters is studied by the Monte Carlo simulations. The THz energy radiated from the n- and p-doped GaAs surface THz emitters, from the contactless p-i-n emitter, and from the photoconductive emitter is evaluated. The obtained results show that the THz energy radiated by the photoconductive emitter exceeds the energy radiated by the surface and p-i-n THz emitters by more than one order of magnitude.
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页码：903 / 908
页数：6
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