In situ observation of the evolution of porous silicon interference filter characteristics

被引：3

作者：

Volk, J

Ferencz, K

Ramsden, JJ

Tóth, AL

Bársony, I

机构：

[1] Res Inst Tech Phys & Mat Sci MFA, H-1525 Budapest, Hungary

[2] Res Inst Solid State Phys & Opt, SZFKI, H-1525 Budapest, Hungary

[3] Cranfield Univ, Dept Adv Mat, Cranfield MK43 0AL, Beds, England

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 08期

关键词：

D O I：

10.1002/pssa.200461234

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Porous silicon multilayer formation was observed by in situ monitoring of the reflectivity spectra in the visible range. In order to reproduce the formation process optical model simulation was carried out. For demonstration of this method a 24-layer microcavity structure was selected. Although in this low wavelengths region some absorption and scattering effects complicate the overall picture, the combined analysis throws new light upon the evolution of the porous silicon multilayer. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1703 / 1706

页数：4

共 5 条

[1]

[Anonymous], THIN FILM OPTICAL FI

[2] Influence of etch stops on the microstructure of porous silicon layers [J].