On the recovery of 2DEG properties in vertically ordered h-BN deposited AlGaN/GaN heterostructures on Si substrate

被引：10
作者：
Whiteside, Matthew [1 ]
Arulkumaran, Subramaniam [2 ]
Chng, Soon Siang [1 ]
Shakerzadeh, Maziar [1 ]
Teo, Hang Tong Edwin [1 ]
Ng, Geok Ing [1 ,2 ]
机构：
[1] Nanyang Technol Univ, Sch EEE, 50 Nanyang Ave, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Temasek Labs NTU, Res Techno Plaza,50 Nanyang Dr, Singapore 637553, Singapore
来源：
APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 06期
关键词：
2DEG Properties; HiPIMS; AlGaN; GaN; Boron Nitride; HEXAGONAL-BORON-NITRIDE; SURFACE PASSIVATION; CURRENT COLLAPSE; FEW-LAYER; GAN; GROWTH;
D O I：
10.35848/1882-0786/ab92ee
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Vertically ordered hexagonal boron nitride (h-BN) films were successfully sputtered on AlGaN/GaN heterostructure (HS) using high power impulse magnetron sputtering at room temperature. The h-BNs vertical ordering along the (0002) plane was confirmed using high-resolution transmission electron microscopy. After the h-BN deposition, degradation of two-dimensional electron gas (2DEG) properties was observed in AlGaN/GaN HS. Full recovery of 2DEG mobility, along with an improvement in sheet resistance and an increase in sheet carrier concentration was obtained after rapid thermal annealing at 500 degrees C for 300 s in a N2 atmosphere, which is due to the reduction of sputtering related structural damage.
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页数：6
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