The effect of cavities on recrystallization growth of high-fluence He implanted-SiC

被引：5

作者：

Zhang, Tongmin ^{[1
]}

He, Xiaoxun ^{[2
]}

Chen, Limin ^{[2
]}

Li, Jun ^{[1
]}

Liao, Qing ^{[2
]}

Xu, Shuai ^{[2
]}

Zheng, Pengfei ^{[4
]}

Li, Bingsheng ^{[2
,3
]}

机构：

[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China

[2] Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China

[3] Southwest Univ Sci & Technol, Minist Educ, Engn Res Ctr Biomass Mat, Mianyang 621010, Sichuan, Peoples R China

[4] Southwestern Inst Phys, Chengdu 610041, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2021年 / 509卷

基金：

中国国家自然科学基金;

关键词：

He implantation; Recrystallization; Microstructure; 6H-SiC; AMORPHOUS-SILICON CARBIDE; HELIUM; AMORPHIZATION; NUCLEATION; RELAXATION; SIMULATION; DEFECT;

D O I：

10.1016/j.nimb.2021.08.012

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The effect of cavities on recrystallization growth of amorphous SiC induced by a high fluence He implantation was investigated. 300 keV He ions were used to implant the 6H-SiC (0001) wafer to a fluence of 4.4 x 1017/cm2 at room temperature. A buried amorphous layer with a width of approximately 468 nm was formed. Moreover, many spherical bubbles with diameters over 25 nm were observed by transmission electron microscopy. Recrystallization of the buried amorphous layer was visible after 900 degrees C annealing for 30 min. Some irregular cavities were found in the damaged layer. The recrystallization started from the amorphous/crystalline interface, and the formed cavities retarded the epitaxial growth. Nanocrystalline SiC was formed in the cavity layer. Extended defects were also characterized by transmission electron microscopy. The research results will give an insight into the recrystallization process in amorphous SiC.

引用

页码：68 / 72

页数：5

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