Ion implantation in AlxGa1-xAs:: Damage structures and amorphization mechanisms

被引：6

作者：

Lagow, BW ^{[1
]}

Turkot, BA

Robertson, IM

Coleman, JJ

Roh, SD

Forbes, DV

Rehn, LE

Baldo, PM

机构：

[1] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1998年 / 4卷 / 04期

基金：

美国国家科学基金会;

关键词：

ion implantation; radiation effects; semiconductor materials;

D O I：

10.1109/2944.720470

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We review previous research on ion implantation in AlxGa1-xAs-GaAs heterostructures, and include observations from our current work in order to assess the various mechanisms that have been proposed to account for damage accumulation and amorphization in this system. In considering all of the experimental observations, the most consistent description is one where amorphization occurs by a combination of point-defect buildup and direct impact amorphization mechanisms.

引用

页码：606 / 618

页数：13

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