Ion implantation in AlxGa1-xAs:: Damage structures and amorphization mechanisms

被引：6
|
作者：
Lagow, BW [1 ]
Turkot, BA
Robertson, IM
Coleman, JJ
Roh, SD
Forbes, DV
Rehn, LE
Baldo, PM
机构：
[1] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1998年 / 4卷 / 04期
基金：
美国国家科学基金会;
关键词：
ion implantation; radiation effects; semiconductor materials;
D O I：
10.1109/2944.720470
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We review previous research on ion implantation in AlxGa1-xAs-GaAs heterostructures, and include observations from our current work in order to assess the various mechanisms that have been proposed to account for damage accumulation and amorphization in this system. In considering all of the experimental observations, the most consistent description is one where amorphization occurs by a combination of point-defect buildup and direct impact amorphization mechanisms.
引用
收藏
页码：606 / 618
页数：13
相关论文
共 13 条
  • [1] In situ RBS investigation of damage production during ion implantation in AlxGa1-xAs at 20 K
    Breeger, B
    Wendler, E
    Schubert, C
    Wesch, W
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4) : 468 - 473
  • [2] Compositional dependence of defect mobility and damage buildup in AlxGa1-xAs
    Stonert, A
    Turos, A
    Nowicki, L
    Breeger, B
    Wendler, E
    Wesch, W
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 : 219 - 223
  • [3] Implantation induced wavelength shift in the reflectivity spectra of green and orange AlxGa1-xAs distributed Bragg reflectors
    Kuei, PY
    Hsieh, LZ
    Chang, LB
    Jeng, MJ
    Cheng, YC
    OPTICAL MATERIALS, 2004, 26 (01) : 1 - 4
  • [4] Mechanisms of Implantation Damage Formation in AlxGa1-xN Compounds
    Faye, D. Nd.
    Wendler, E.
    Felizardo, M.
    Magalhaes, S.
    Alves, E.
    Brunner, F.
    Weyers, M.
    Lorenz, K.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2016, 120 (13) : 7277 - 7283
  • [5] Rapid ion-implantation-induced amorphization of InxGa1-xAs relative to InAs and GaAs
    Hussain, Z. S.
    Wendler, E.
    Wesch, W.
    Foran, G. J.
    Schnohr, C. S.
    Llewellyn, D. J.
    Ridgway, M. C.
    PHYSICAL REVIEW B, 2009, 79 (08):
  • [6] X-ray studies of AlxGA1-xAs implanted with 1.5 MeV as ions
    Wierzchowski, W
    Wieteska, K
    Graeff, W
    Turos, A
    Grötzschel, R
    VACUUM, 2003, 70 (2-3) : 115 - 121
  • [7] Characterization of Mg+F, Mg+Ar dual ion implanted AlxGa1-xAs (0<=x<=0.75) layers
    Hara, N
    Suehiro, H
    Kuroda, S
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1943 - 1947
  • [8] AlxGa1-xAs/GaAs Solar Cell Grown by Multi-substrate Liquid Phase Epitaxy
    CHEN Tingjin
    SemiconductorPhotonicsandTechnology, 1998, (02) : 128 - 133
  • [9] Magnetic-field-tuned impurity level in a mesoscopic AlxGa1-xAs/GaAs antidot sample
    Gusev, G.M.
    Gennser, Ulf
    Maude, D.K.
    Portal, J.C.
    Lubyshev, D.I.
    Nastaushev, Yu.V.
    Rossi, J.C.
    Basmaji, P.
    Journal of Physics Condensed Matter, 1994, 6 (18)
  • [10] Mechanisms of Focused Ion Beam Implantation Damage and Recovery in Si
    G. P. S. Balasubramanian
    R. Hull
    Journal of Electronic Materials, 2016, 45 : 3236 - 3243
12