A study on wafer level vacuum packaging for MEMS devices

被引:113
作者
Lee, B
Seok, S
Chun, K
机构
[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
[2] Samsung Adv Inst Technol, Yongin, Gyeonggi Do, South Korea
关键词
Bonding - Electronics packaging - Etching - Micromachining - Polysilicon - Pressure measurement - Q factor measurement - Resonators - Semiconducting glass - Silicon wafers - Vacuum applications;
D O I
10.1088/0960-1317/13/5/318
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new vacuum packaging process at the wafer level is developed for the surface micromachining devices using glass-silicon anodic bonding technology. The rim for the glass-silicon bonding process which is needed to prevent vacuum leakage is built up simultaneously as the structure is being etched. The mechanical resonator is used as a tool for evaluating the vacuum level of the packaging. The inside pressure of the packaged device was measured indirectly by measuring the quality factor of the mechanical resonator. The measured Q factor was about 5 x 10(4) and the estimated inner pressure was about 1 mTorr. It is also possible to change the inside pressure of the packaged devices from 2 Torr to 1 mTorr by varying the amount of Ti getter material. The yield of the vacuum packaging process is about 80% and vacuum degradation was not observed after 1000 h had passed. The developed vacuum packaging process is also applied to resonant accelerometers which need a high vacuum environment to implement higher performance.
引用
收藏
页码:663 / 669
页数:7
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