Progress in BiFeO3-based heterostructures: materials, properties and applications

被引:116
作者
Yin, Li [1 ]
Mi, Wenbo [1 ]
机构
[1] Tianjin Univ, Sch Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Tianjin 300354, Peoples R China
基金
中国国家自然科学基金;
关键词
RESISTIVE SWITCHING CHARACTERISTICS; MAGNETIC TUNNEL-JUNCTIONS; FERROELECTRIC THIN-FILMS; EXCHANGE BIAS; MULTIFERROIC BIFEO3; ELECTRIC-FIELD; TETRAGONAL BIFEO3; DOMAIN-WALLS; OXIDE INTERFACES; LOCAL CONDUCTION;
D O I
10.1039/c9nr08800h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
BiFeO3-based heterostructures have attracted much attention for potential applications due to their room-temperature multiferroic properties, proper band gaps and ultrahigh ferroelectric polarization of BiFeO3, such as data storage, optical utilization in visible light regions and synapse-like function. Here, this work aims to offer a systematic review on the progress of BiFeO3-based heterostructures. In the first part, the optical, electric, magnetic, and valley properties and their interactions in BiFeO3-based heterostructures are briefly reviewed. In the second part, the morphologies of BiFeO3 and medium materials in the heterostructures are discussed. Particularly, in the third part, the physical properties and underlying mechanism in BiFeO3-based heterostructures are discussed thoroughly, such as the photovoltaic effect, electric field control of magnetism, resistance switching, and two-dimensional electron gas and valley characteristics. The fourth part illustrates the applications of BiFeO3-based heterostructures based on the materials and physical properties discussed in the second and third parts. This review also includes a future prospect, which can provide guidance for exploring novel physical properties and designing multifunctional devices.
引用
收藏
页码:477 / 523
页数:47
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