First-principles investigation of MoS2 monolayer adsorbed on SiO2 (0001) surface

被引:11
作者
Su, Xiangying [1 ]
Cui, Hongling [1 ]
Ju, Weiwei [1 ]
Yong, Yongliang [1 ]
Li, Xiaohong [1 ]
机构
[1] Henan Univ Sci & Technol, Sch Phys & Engn, Luoyang 471023, Peoples R China
来源
MODERN PHYSICS LETTERS B | 2017年 / 31卷 / 25期
基金
中国国家自然科学基金;
关键词
MoS2/SiO2 hybrid system; interface interaction; structural properties; electronic properties; TOTAL-ENERGY CALCULATIONS; ELECTRONIC-PROPERTIES; 1ST PRINCIPLES; STRAIN;
D O I
10.1142/S0217984917502293
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, the geometric and electronic structure of MoS2 monolayer (ML) adsorbed on SiO2 (0001) surface were studied by using density functional theory calculations. The calculated interfacial binding energy shows that the MoS2/SiO2 hybrid system is stable. MoS2 ML is bound to the SiO2 surface with a big interlayer spacing and no covalent bonds form at the interface. The study of the density of states and the charge transfer indicates that the interaction between MoS2 ML and the SiO2 substrate is very weak. As a result, the electronic properties of MoS2 ML are almost not affected by the SiO2 substrate. This work will be beneficial to the design of MoS2 ML-based devices where a substrate is needed.
引用
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页数:9
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