Near-ultraviolet absorption annealing in hafnium oxide thin films subjected to continuous-wave laser radiation

被引:15
作者
Papernov, Semyon [1 ]
Kozlov, Alexei A. [1 ]
Oliver, James B. [1 ]
Kessler, Terrance J. [1 ]
Shvydky, Alexander [1 ]
Marozas, Brendan [2 ]
机构
[1] Univ Rochester, Laser Energet Lab, Rochester, NY 14623 USA
[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
关键词
absorption annealing; hafnium oxide thin films; laser damage; DAMAGE-THRESHOLD; SIO2;
D O I
10.1117/1.OE.53.12.122504
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Hafnium oxide (HfO2) is the most frequently used high-index material in multilayer thin-film coatings for high-power laser applications ranging from near-infrared to near-ultraviolet (UV). Absorption in this high-index material is also known to be responsible for nanosecond-pulse laser-damage initiation in multilayers. In this work, modification of the near-UV absorption of HfO2 monolayer films subjected to irradiation by continuous-wave (cw), 355-nm or 351-nm laser light focused to produce power densities of the order of similar to 100 kW/cm(2) is studied. Up to a 70% reduction in absorption is found in the areas subjected to irradiation. Temporal behavior of absorption is characterized by a rapid initial drop on the few-tens-of-seconds time scale, followed by a longer-term decline to a steady-state level. Absorption maps generated by photothermal heterodyne imaging confirm the permanent character of the observed effect. Nanosecond-pulse, 351-nm and 600-fs, 1053-nm laser-damage tests performed on these cw laser-irradiated areas confirm a reduction of absorption by measuring up to 25% higher damage thresholds. We discuss possible mechanisms responsible for near-UV absorption annealing and damage-threshold improvement resulting from irradiation by near-UV cw laser light. (C) The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
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页数:6
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