Uniaxial and biaxial strain field dependence of the thermal oxidation rate of silicon

被引：12
作者：
Noma, H
Takahashi, H
Fujioka, H
Oshima, M
Baba, Y
Hirose, K
Niwa, M
Usuda, K
Hirashita, N
机构：
[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
[2] Japan Atom Energy Res Inst, Tokai, Ibaraki 3191195, Japan
[3] Inst Space & Astronaut Sci, Sagamihara, Kanagawa 2298510, Japan
[4] Semiconductor Technol Acad Res Ctr, Kohoku Ku, Yokohama, Kanagawa 2220033, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 10期
关键词：
D O I：
10.1063/1.1413229
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the effect of homogenous uniaxial and biaxial strains on the thermal oxidation processes of Si with newly developed techniques. X-ray photoelectron spectroscopy (XPS) and ellipsometry measurements have revealed that the biaxial compressive strain suppresses the oxidation rate at temperatures lower than 800 degreesC, while the uniaxial strain does not affect the oxidation rate. It has been also found that stress during the thermal oxidation does not cause any change in the electronic states of the oxide which are characterized by XPS and x-ray absorption near edge structure. (C) 2001 American Institute of Physics.
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页码：5434 / 5437
页数：4
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