Perpendicular magnetization in Fe/Ni bilayers on GaAS(001)

被引：17

作者：

Przybylski, M ^{[1
]}

Chakraborty, S ^{[1
]}

Kirschner, J ^{[1
]}

机构：

[1] Max Planck Inst Mikrostrukturphys, D-06120 Halle Saale, Germany

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2001年 / 234卷 / 03期

关键词：

ferromagnetic thin films; semiconducting substrates; anisotropy; spin-polarized transport;

D O I：

10.1016/S0304-8853(01)00253-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Following the concept of spin-injection into a semiconductor-based device, a ferromagnetic element (like a GMR multilayer structure) can be used as a spin filter. A high spin-polarization of the electrons can be realized by the preparation of a monocrystalline multilayer structure consisting of ultrathin films of a high magnetic polarization. In the case of ultrathin films, the manipulation of the easy-axis of magnetization is possible, by changing the anisotropy terms contributing to the effective anisotropy of the structure. We report on the structural and magnetic properties of Ni/Fe and Fe/Ni bilayers epitaxially grown on GaAs(0 0 1). By a proper choice of Fe and Ni sequences (Fe/Ni/GaAs) and their thickness (up to 3 ML of Fe on the top of Ni), the rotation of magnetization from the in-plane to the out-of-plane direction was achieved. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：505 / 519

页数：15

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