Realization and modeling of a 27-GHz integrated passively mode-locked ring laser

被引：19

作者：

Barbarin, Y ^{[1
]}

Bente, EAJM

Heck, MJR

den Besten, JH

Guidi, G

Oei, YS

Binsma, JJM

Smit, MK

机构：

[1] Eindhoven Univ Technol, COBRA, NL-5600 MB Eindhoven, Netherlands

[2] JDS Uniphase, NL-5656 AA Eindhoven, Netherlands

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2005年 / 17卷 / 11期

关键词：

active-passive integration; integrated optics; mode-locked lasers; semiconductor waveguide;

D O I：

10.1109/LPT.2005.857228

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a realization and the modeling of a 27-GHz integrated extended cavity ring laser that is passively mode-locked. The mode-locked ring laser is fabricated with active-passive integration. Experimental results show that internal reflections are the major factor affecting operation stability. Continuous-wave, self-pulsating, and in small windows of operation mode-locked regimes have been observed. Similar regimes have been observed in our bidirectional laser model. This model describes the semiconductor amplifier and the saturable absorber using rate equations. Our experimental and theoretical results are compared and discussed.

引用

页码：2277 / 2279

页数：3

共 5 条

[1]

[Anonymous], 2001, P IEEE LEOS S BEN

[2]

BARBARIN Y, 2004, P IEEE LEOS BEN CHAP, P119

[3] ON THE SEMICONDUCTOR-LASER LOGARITHMIC GAIN CURRENT-DENSITY RELATION [J].