Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y2O3 films

被引：9

作者：

Huang, X. D. ^{[1
]}

Liu, L. ^{[2
]}

Xu, J. P. ^{[2
]}

Lai, P. T. ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

[2] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 11期

基金：

中国国家自然科学基金;

关键词：

DIELECTRICS; RETENTION; OXIDES; LAYER;

D O I：

10.1063/1.3639275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The charge-trapping properties of HfYON film are investigated by using the Al/HfYON/SiO2/Si structure. The physical features of this film were explored by transmission electron microscopy and x-ray photoelectron spectroscopy. The proposed device shows better charge-trapping characteristics than samples with HfON or Y2O3 as the charge-trapping layer due to its higher trapping efficiency, as confirmed by extracting their charge-trap centroid and charge-trap density. Moreover, the Al/Al2O3/HfYON/SiO2/Si structure shows high program speed (4.5 V at +/- 14 V, 1 ms), large memory window (6.0 V at +/- 14 V, 1 s), and good retention property, further demonstrating that HfYON is a promising candidate as the charge-trapping layer for nonvolatile memory applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3639275]

引用

页数：3

共 15 条

[1] Physical and electrical characterization of ultrathin yttrium silicate insulators on silicon [J].

Chambers, JJ ;

Parsons, GN .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (02) :918-933

[2] Trapping characteristics of Al2O3/HfO2/SiO2 stack structure prepared by low temperature in situ oxidation in dc sputtering [J].

Chang, Chia-Hua ;

Hwu, Jenn-Gwo .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (09)

[3] Stability of terbium scandate on Si(100) [J].

Copel, M. ;

Bojarczuk, N. ;

Edge, L. F. ;

Guha, S. .

APPLIED PHYSICS LETTERS, 2010, 97 (18)

[4] Wide-bandgap high-k Y2O3 as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high-k HfTiO gate dielectric [J].

Li, C. X. ;

Lai, P. T. .

APPLIED PHYSICS LETTERS, 2009, 95 (02)

[5]

Lin SH, 2008, INT EL DEVICES MEET, P843

[6] CHARACTERIZATION OF CHARGE TRAPPING AND HIGH-FIELD ENDURANCE FOR 15-NM THERMALLY NITRIDED OXIDES [J].

LIU, ZH ;

LAI, PT ;

CHENG, YC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (02) :344-354

[7] High-performance high-k Y2O3SONOS-Type flash memory [J].

Pan, Tung-Ming ;

Yeh, Wen-Wei .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (09) :2354-2360

[8] HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy [J].

Renault, O ;

Samour, D ;

Damlencourt, JF ;

Blin, D ;

Martin, F ;

Marthon, S ;

Barrett, NT ;

Besson, P .

APPLIED PHYSICS LETTERS, 2002, 81 (19) :3627-3629

[9] Stability and band offsets of nitrogenated high-dielectric-constant gate oxides [J].

Shang, G ;

Peacock, PW ;

Robertson, J .

APPLIED PHYSICS LETTERS, 2004, 84 (01) :106-108

[10] Nitridation of hafnium oxide by reactive sputtering [J].

Tong, KY ;

Jelenkovic, EV ;

Liu, W ;

Dai, JY .

MICROELECTRONIC ENGINEERING, 2006, 83 (02) :293-297

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