Study on thermal stability of electroless deposited Ni-Co-P alloy thin film

被引:13
作者
Kumar, Anuj [1 ]
Singh, Amanpal [1 ]
Kumar, Mukesh [1 ]
Kumar, Dinesh [1 ]
Barthwal, Sumit [2 ]
机构
[1] Kurukshetra Univ, Dept Elect Sci, Kurukshetra 136119, Haryana, India
[2] IIT, Nano Sci & Nano Technol Unit, Kanpur 208016, Uttar Pradesh, India
关键词
ROOM-TEMPERATURE; NICKEL;
D O I
10.1007/s10854-011-0336-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The Ni-P and Ni-Co-P alloy thin films were deposited on silicon substrates with electroless technique. The solid state metallurgical reactions were investigated with silicon for the viewpoint of Co co-deposition effect. The alloy film kept amorphous state with increasing Co content even though the P content decreased. The films become more amorphous, and the thermal stability increased with increment of Co content in the deposit. The Co content was varied from 11.013 to 45.068 wt% while P content was decreased from 9.340 to 6.491 wt% by varying the concentration of components in electroless deposition baths. The thermal stability was examined by X-ray diffractometer (XRD), four probe, and atomic force microscopy (AFM). The results indicated the Ni-Co-P alloy films with lower P content show the higher thermal stability then the ordinary Ni-P films and prevent the silicidation at low temperature because the Ni crystallization formation suppressed by the co-deposition of Co.
引用
收藏
页码:1495 / 1500
页数:6
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