SOI RESURF LDMOS transistor using trench filled with oxide

被引：13

作者：

Son, WS

Solm, YH

Choi, SY

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South Korea

[2] Yeungnam Univ, Sch Elect Engn & Comp Sci, Kyongsan 712749, South Korea

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 24期

关键词：

D O I：

10.1049/el:20031115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of the breakdown voltage and the specific on-resistance of RESURF LDMOS transistors, based on SOI, have been improved by using a trench filled with oxide in the drift region of the device. The breakdown voltage is 352 V and the specific on-resistance is 18,8 mOmega . cm(2) with the saturation drain current of 110 muA/mum.

引用

页码：1760 / 1761

页数：2

共 4 条

[1]

[Anonymous], 1979, IEDM

[2] Linearly varying surface-implanted n- layer used for improving trade-off between breakdown voltage and on-resistance of RESURF LDMOS transistor [J].

He, J ;

Zhang, X ;

Wang, YY .

MICROELECTRONICS JOURNAL, 2001, 32 (12) :969-971

[3]

Merchant S., 1993, Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs ISPSD '93 (Cat. No.93CH3314-2), P124, DOI 10.1109/ISPSD.1993.297121

[4]

ZITOUNI M, 1999, P 11 INT S POW SEM D, P73

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