Enhanced electrocaloric effect and energy-storage performance in PBLZT films with various Ba2+ content

被引:21
作者
Gao, Hongcheng [1 ]
Sun, Ningning [1 ]
Li, Yong [1 ]
Zhang, Qiwei [1 ]
Hao, Xihong [1 ]
Kong, Ling Bing [2 ]
Wang, Qing [3 ]
机构
[1] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Inner Mongolia Key Lab Adv Ceram Mat & Devices, Baotou 014010, Peoples R China
[2] Nanyang Technol Univ, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore
[3] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
Antiferroelectric; Thick films; Electrocaloric effect; Energy-storage; FERROELECTRIC POLYMER NANOCOMPOSITES; THIN-FILM; ELECTRICAL-PROPERTIES; CERAMICS; DENSITY; LA)(ZR; (PB; SN;
D O I
10.1016/j.ceramint.2016.08.054
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
(100)-oriented Pb(0.90-x)BaxLa0.10Zr0.90Ti0.10O3 (x=0, 0.02, 0.05 and 0.11) antiferroelectric thick films were deposited on LaNiO3/Si (100) substrates by the sol-gel process. The influences of Ba2+ content on the dielectric properties, electrocaloric effect (ECE), energy-storage performance and leakage current were systematically investigated. With Ba2+ content increasing, the temperature (T-m) corresponding to the maximum dielectric constant of the thick films was decreased, while their diffuseness was increased. The maximum ECE Delta T=18.1 degrees C was obtained in the thick film with x=0.05 at room temperature under Delta E=700 kV/cm. The maximum energy storage density of 42.3 J/cm(3) and the corresponding efficiency of 68% was achieved in the film with x=0.11, companied by a power density of 0.53 MW/cm(3), due to its high breakdown strength. In addition, a small leakage current density (< 10(-5) A/cm(2)) were attained in these films at room temperature. In conclusion, we believe that this kind of antiferroelctric thick film is a potential candidate for applications in solid cooling devices and the energy-storage systems. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:16439 / 16447
页数:9
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