Electrical models of through silicon Vias and silicon-based devices for millimeter-wave application

As the short vertical interconnections can significantly shorten the interconnect length between different circuits, three-dimensional integrated circuits (3D ICs) based on the through-silicon via (TSV) technology are considered as one of the most promising alternatives to overcome the scaling limits of Moore's low. Moreover, as the silicon technologies have been progressively expanded into the millimeter-wave (mmW) realm, the TSV technology also provides a promising option to realize a compact system with high performance and operating frequencies. This article provides an overview of recent advances in the development of TSV technologies and silicon-based passive devices for mmW applications. As various kinds of TSV losses are detrimental to the electrical performance of 3D ICs, especially in mmW systems, TSVs exploiting novel structures and materials still needs much more research, making it possible to integrate the passive device on 3D ICs and providing a promising option to realize a compact mmW system with excellent electrical performance and system reliability.