Analysis of the TSi-dependent subthreshold characteristics in lightly-doped asymmetric double-gate MOSFETs

被引：0

作者：

Lee, H ^{[1
]}

Shin, H ^{[1
]}

机构：

[1] Ewha Womans Univ, Dept Informat Elect Engn, Seoul 120750, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2004年 / 44卷 / 01期

关键词：

double-gate MOSFET; subthreshold characteristics; volume inversion;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The subthreshold characteristics of double-gate (DG) MOSFETs with various thicknesses of a Si film (T-Si) are analyzed. It is found that, in comparison to the symmetrical DG-MOSFET, the subthreshold characteristics of the lightly-doped asymmetric device have a larger dependence on T-Si, which is due to the linear distribution of the potential in the Si-film region. Further, we derive an analytical equation which can explain these phenomena and verify the accuracy of the analytical equation by comparing them with the device simulation results. Due to these T-Si-sensitive subthreshold characteristics, tight control of T-Si is required for lightly-doped asymmetric DG-MOSFETs to keep a large I-on/O-off ratio.

引用

页码：56 / 59

页数：4

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