Numerical physics of subpicosecond electrical pulse generation by nonuniform gap illumination

被引：10
|
作者：
Zhou, X
机构：
[1] Sch. of Elec. and Electron. Eng., Nanyang Technological University
[2] Tsinghua University, Beijing
[3] University of Rochester, Rochester, NY
[4] Elec. and Electronic Engineering, Nanyang Technological University, Singapore
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1996年 / 32卷 / 09期
关键词：
D O I：
10.1109/3.535373
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The physical mechanism of subpicosecond electrical pulse generated bg nonuniform illumination of transmission-line gaps is studied in detail using a two-dimensional numerical model. This model agrees very well nifh existing theories as well as experimental observations and further explains the observed highly nonuniform field distributions, which have been neglected in previous theories. The pulse dependence on light intensity, bias voltage, substrate doping, and beam size and location are studied and discussed, It also confirms that this mechanism should be observable in silicon.
引用
收藏
页码：1672 / 1679
页数：8
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