Bipolar switching characteristics of low-power Geo resistive memory

被引：5

作者：

Cheng, C. H. ^{[1
,2
]}

Chen, P. C. ^{[3
]}

Liu, S. L. ^{[4
]}

Wu, T. L. ^{[4
]}

Hsu, H. H. ^{[4
]}

Chin, Albert ^{[4
]}

Yeh, F. S. ^{[1
,2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu, Taiwan

[3] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu, Taiwan

[4] Natl Chiao Tung Univ, Dept Elect Eng, Hsinchu, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2011年 / 62卷 / 01期

关键词：

Resistive random access memory (RRAM); Germanium oxide (GeO2);

D O I：

10.1016/j.sse.2011.04.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeOx dielectric. This cost-effective Ni/GeOx/TaN RRAM device has very small set power of 2 mu W, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 degrees C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：90 / 93

页数：4

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