On the measurement of the Pockels effect in strained silicon

被引：49

作者：

Azadeh, S. Sharif ^{[1
]}

Merget, F. ^{[1
]}

Nezhad, M. P. ^{[1
]}

Witzens, J. ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Inst Integrated Photon, D-52074 Aachen, Germany

来源：

OPTICS LETTERS | 2015年 / 40卷 / 08期

基金：

欧洲研究理事会;

关键词：

WAVE-GUIDES; 2ND-HARMONIC GENERATION; OPTICAL SUSCEPTIBILITY; NITRIDE FILMS; DEFORMATION; REFLECTION; DEPENDENCE;

D O I：

10.1364/OL.40.001877

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We measure the voltage-dependent phase shift in silicon waveguides strained by a silicon nitride layer and show that, in our measurements, the phase shift is due to free carrier accumulation inside the waveguides. Nonetheless, inverting the applied voltage also inverts the applied phase shift-an effect due to a quasi-static surface charge in the silicon nitride. Since the measured effect is on the same order as recently published second-order nonlinearities attributed to the Pockels effect, inclusion of these carrier-based effects in the analysis of experimental data is of paramount importance. (C) 2015 Optical Society of America

引用

页码：1877 / 1880

页数：4

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