Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD

GaN has been grown on 3C-SiC/Si(001) at temperatures from 600 to 800 degrees C by low pressure MOCVD using TMGa and NH3. The grown films were characterized by X-ray diffraction signals from the zinc-blende GaN(002) and the wurtzite GaN(0002) planes. An X-ray diffraction signal detected at 36.8 degrees indicated the wurtzite GaN(<10(1)over bar 1>) plane. The growth of the wurtzite GaN was suppressed by increasing the growth temperature. The annealing of the thick polycrystalline GaN in NH3 ambient at 800 degrees C was found to cause the atomic displacement and sublimation. Zinc-blende GaN with suppressed wurtzite domain was obtained on 3C-SiC/Si(001) at 800 degrees C by inserting a thin polycrystalline GaN buffer layer deposited at 600 degrees C.