60-GHz Gigabits-Per-Second OOK Modulator With High Output Power in 90-nm CMOS

被引：33

作者：

Lee, Jae Jin ^{[1
]}

Park, Chul Soon ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Intelligent Radio Engn Ctr, Taejon 305732, South Korea

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2011年 / 58卷 / 05期

关键词：

Complementary metal-oxide-semiconductor (CMOS); ON-OFF keying (OOK) modulator; transmitter; V-band; 60; GHz; 90; nm;

D O I：

10.1109/TCSII.2011.2124890

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new architecture for a 60-GHz ON-OFF keying (OOK) modulator with high gain, high ON/OFF isolation, high data rates, and high output power while retaining low direct-current (dc) power dissipation is presented in this brief. The modulator is designed in a 90-nm complementary metal-oxide-semiconductor process by current reuse and a dual-modulation technique and has 28.4-dB high ON/OFF isolation, a gain of 9.9 dB at 60 GHz, and 1.5-dBm high OP1dB with 14.4-mW dc power consumption at the ON-state of an OOK baseband signal. A data rate of up to 2 Gb/s has also been measured. The proposed 60-GHz OOK modulator, which can substitute for a power amplifier and an up-conversion mixer in a conventional 60-GHz OOK transmitter, helps make possible wireless multigigabit data transmission within a distance of 1 m using mobile devices with a 60-GHz OOK transceiver.

引用

页码：249 / 253

页数：5

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