Synthesis of titanium nitride thin films deposited by a new shielded arc ion plating

被引：28
|
作者：
Zhao, Yanhui [1 ]
Lin, Guoqiang [2 ]
Xiao, Jinquan [1 ]
Lang, Wenchang [1 ]
Dong, Chuang [2 ]
Gong, Jun [1 ]
Sun, Chao [1 ]
机构：
[1] Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
[2] Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 13期
基金：
中国国家自然科学基金;
关键词：
Shielded arc ion plating; TiN; Thin films; Deposition rate; Droplet particles; Adhesion; CATHODIC ARC; REACTIVE VACUUM;
D O I：
10.1016/j.apsusc.2011.01.075
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Thin films of titanium nitride (TiN) were deposited on stainless steel substrates by a modified deposition technique, double-layered shielded arc ion plating with vicarious circular holes (DL-SAIP). The results show that the TiN film with the distance of 10mm between the double-layered shield plates had the least droplets. The deposition rate of the films prepared with the new technique was more homogeneous than that of all the other shielded arc ion plating. The film/substrate adhesion and microhardness values of the TiN films were higher than 40N and 18 GPa, respectively. Thus such TiN thin films can be expected in applications. Crown Copyright (C) 2011 Published by Elsevier B. V. All rights reserved.
引用
收藏
页码：5694 / 5697
页数：4
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