Crystal orientation effect on spin injection/detection efficiency in Si lateral spin-valve devices

被引：2

作者：

Ishikawa, Mizue ^{[1
]}

Tsukahara, Makoto ^{[1
]}

Honda, Syuta ^{[2
,3
]}

Fujita, Yuichi ^{[1
]}

Yamada, Michihiro ^{[1
]}

Saito, Yoshiaki ^{[4
]}

Kimura, Takashi ^{[3
,5
]}

Itoh, Hiroyoshi ^{[2
,3
]}

Hamaya, Kohei ^{[1
,3
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Dept Syst Innovat, 1-3 Machikaneyama, Toyonaka, Osaka 5608531, Japan

[2] Kansai Univ, Fac Engn Sci, Dept Pure & Appl Phys, 3-3-35 Yamate, Suita, Osaka 5648680, Japan

[3] Osaka Univ, Grad Sch Engn Sci, Ctr Spintron Res Network, 1-3 Machikaneyama, Toyonaka, Osaka 5608531, Japan

[4] Tohoku Univ, Ctr Innovat Integrated Elect Syst, 468-1 Aramaki Aza Aoba, Sendai, Miyagi 9800845, Japan

[5] Kyushu Univ, Dept Phys, 744 Motooka, Fukuoka, Fukuoka 8190395, Japan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2019年 / 52卷 / 08期

基金：

日本学术振兴会;

关键词：

spin injection; spin transport; semiconductor spintronics; ELECTRICAL DETECTION; LOGIC;

D O I：

10.1088/1361-6463/aaf37c

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show evident crystal orientation effect on pure spin current transport in Si-based lateral spin-valve (LSV) devices with epitaxially grown CoFe/MgO tunnel contacts. When we compare nonlocal spin signals between LSV devices along < 1 0 0 > (Si < 1 0 0 >) and < 1 1 0 > (Si < 1 1 0 >), we find that the magnitude of the spin signals for Si < 100 > LSV devices is always larger than that for Si < 1 1 0 > LSV devices. The analyses based on the one-dimensional spin diffusion model reveal that the spin diffusion length and spin lifetime between Si < 1 0 0 > and Si < 1 1 0 > LSV devices are comparable, while the spin injection/detection efficiency in Si < 1 0 0 > LSV devices is evidently larger than that in Si < 1 1 0 > ones. Possible origins of the difference in the spin injection/detection efficiency between Si < 1 0 0 > and Si < 1 1 0 > LSV devices are discussed.

引用

页数：8

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[1] Large pure spin current generation in metallic nanostructures [J].