Laser-Ablated Antireflective Structures for Terahertz Radiation Focusing

被引:0
作者
Tamosiunas, Vincas [1 ,2 ]
Indrisiunas, Simonas [1 ]
Tamosiunaite, Milda [1 ]
Minkevicius, Linas [1 ,2 ]
Urbanowicz, Andrzej [1 ]
Raciukaitis, Gediminas [1 ]
Kasalynas, Irmantas [1 ]
Valusis, Gintaras [1 ,2 ]
机构
[1] Ctr Phys Sci & Technol, Sauletekio Av 3, LT-10257 Vilnius, Lithuania
[2] Vilnius Univ, Inst Photon & Nanotechnol, Sauletekio Av 3, LT-10257 Vilnius, Lithuania
来源
2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2018年
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Numerical simulations and experimental characterization of laser-ablated anti-reflective, phase shifting and focusing structures for terahertz frequencies are presented. Nearly 90 % transmittance of silicon wafers with anti-reflective structures on both sides was confirmed experimentally within 0.5-0.6 THz frequency range. Focusing binary zone plate for 0.6 THz was produced employing phase shift differences due to the dual function antireflective layer. Close to diffraction--limited focusing performance was demonstrated thus further confirming sufficient uniformity of the structured layer for reliable phase-shifting application.
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