Electronic band structure of GaSe(0001):: Angle-resolved photoemission and ab initio theory -: art. no. 125304

被引:62
作者
Plucinski, L
Johnson, RL
Kowalski, BJ
Kopalko, K
Orlowski, BA
Kovalyuk, ZD
Lashkarev, GV
机构
[1] Univ Hamburg, Inst Expt Phys, D-22761 Hamburg, Germany
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[3] Natl Acad Sci Ukraine, Inst Problems Mat Sci, UA-03680 Kiev, Ukraine
来源
PHYSICAL REVIEW B | 2003年 / 68卷 / 12期
关键词
D O I
10.1103/PhysRevB.68.125304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
By performing extensive angle-resolved photoemission measurements using tunable linearly polarized synchrotron radiation with photon energies from 15 to 31 eV on high quality cleaved samples we have succeeded in experimentally mapping the occupied electronic bands of GaSe(0001) along all key symmetry directions. The experimental results are in very good agreement with state-of-the-art ab initio theoretical calculations. The data were analyzed assuming a direct transition model and final-state effects are discussed in the analysis of the normal-emission data. The off-normal emission spectra accurately reproduce the gaps in the calculated projected band structure. The azimuthal symmetry of the photocurrent revealed the polytype of the samples investigated.
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页数:8
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共 32 条
[1]   HETEROEPITAXIAL GROWTH OF LAYERED GASE FILMS ON GAAS(001) SURFACES [J].
ABE, H ;
UENO, K ;
SAIKI, K ;
KOMA, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (10A) :L1444-L1447
[2]   van der Waals interactions in density-functional theory [J].
Andersson, Y ;
Langreth, DC ;
Lundqvist, BI .
PHYSICAL REVIEW LETTERS, 1996, 76 (01) :102-105
[3]   ELECTRONIC PROPERTIES OF THE III-VI LAYER COMPOUNDS GAS, GASE AND INSE .2. PHOTOEMISSION [J].
ANTONANGELI, F ;
PIACENTINI, M ;
BALZAROTTI, A ;
GRASSO, V ;
GIRLANDA, R ;
DONI, E .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1979, 51 (01) :181-197
[4]   INDIRECT ENERGY GAP IN GASE AND GAS [J].
AULICH, E ;
BREBNER, JL ;
MOOSER, E .
PHYSICA STATUS SOLIDI, 1969, 31 (01) :129-&
[5]   Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamics [J].
Bockstedte, M ;
Kley, A ;
Neugebauer, J ;
Scheffler, M .
COMPUTER PHYSICS COMMUNICATIONS, 1997, 107 (1-3) :187-222
[6]   Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach [J].
Camara, MOD ;
Mauger, A ;
Devos, I .
PHYSICAL REVIEW B, 2002, 65 (12) :1-12
[7]   Microstructure evolution of GaSe thin films grown on GaAs(100) by molecular beam epitaxy [J].
Dai, ZR ;
Chegwidden, SR ;
Rumaner, LE ;
Ohuchi, FS .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) :2603-2608
[8]   ELECTRONIC PROPERTIES OF THE III-VI LAYER COMPOUNDS GAS, GASE AND INSE .1. BAND-STRUCTURE [J].
DONI, E ;
GIRLANDA, R ;
GRASSO, V ;
BALZAROTTI, A ;
PIACENTINI, M .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1979, 51 (01) :154-180
[9]  
DYNOWSKA E, COMMUNICATION
[10]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF INSE AND GASE LAYERED COMPOUNDS GROWN BY MOLECULAR-BEAM EPITAXY [J].
EMERY, JY ;
BRAHIMOSTMANE, L ;
HIRLIMANN, C ;
CHEVY, A .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (07) :3256-3259