共 32 条
[1]
HETEROEPITAXIAL GROWTH OF LAYERED GASE FILMS ON GAAS(001) SURFACES
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1993, 32 (10A)
:L1444-L1447
[3]
ELECTRONIC PROPERTIES OF THE III-VI LAYER COMPOUNDS GAS, GASE AND INSE .2. PHOTOEMISSION
[J].
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS,
1979, 51 (01)
:181-197
[6]
Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach
[J].
PHYSICAL REVIEW B,
2002, 65 (12)
:1-12
[8]
ELECTRONIC PROPERTIES OF THE III-VI LAYER COMPOUNDS GAS, GASE AND INSE .1. BAND-STRUCTURE
[J].
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS,
1979, 51 (01)
:154-180
[9]
DYNOWSKA E, COMMUNICATION